gallium nitride Archives

Understanding field scattering in AlGaN/GaN heterostructure field-effect transistors

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To investigate the effect of polarisation Coulomb field scattering on improving the performance of AlGaN/GaN heterostructure field-effect transistors.

Field-effect transistors featuring stacked layers of semiconductors are important elements of many electrical devices, especially in wireless communication systems. Through a series of studies, research led by Professor Zhaojun Lin at Shandong University, China, has identified one particular mechanism driving an unavoidable limitation in these devices. By drawing from their new theoretical description of ‘polarisation Coulomb field scattering’, the team […]

Scaling down electronic components with diamond films

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Joana Mendes researches the integration of artificial diamond with power electronic devices.

Diamonds are an engineer’s best friend. As well as their incredible hardness, diamonds have several physical properties that make them excellent for electrical devices – like light-emitting diodes (LEDs). One of the big challenges in electronics is continually trying to miniaturise devices: the smaller they become, the more heat is generated which reduces their lifespan, reliability, and efficiency. Effective thermal […]