Tag: Heterostructure FETs
Understanding field scattering in AlGaN/GaN heterostructure field-effect transistors
Field-effect transistors featuring stacked layers of semiconductors are important elements of many electrical devices, especially in wireless communication systems. Through a series of studies, research led by Professor Zhaojun Lin at Shandong University, China, has identified one particular mechanism driving an unavoidable limitation in these devices. By drawing from their new theoretical description of ‘polarisation Coulomb field scattering’, the team […]
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